Nelson Tansu, assistant professor of electrical and computer engineering, has been awarded a U.S. patent for a new method of achieving 1550-nanometer lasers on gallium-arsenide.
The technique was developed by Tansu and Luke J. Mawst, associate professor of electrical and computer engineering at the University of Wisconsin.
The technique utilizes Type-II gallium-arsenide antimony/gallium-arsenide nitride quantum well (Type-II GaAsSb-GaAsN QW) optoelectronics to achieve 1550-nm lasers on gallium-arsenide and has potential uses in optical telecommunications.
Typically, lasers emitting at the 1550-nm wavelength regime are based on indium-phosphide technology, which requires more complex methods to fabricate VCSELs (vertical cavity surface-emitting lasers) and also requires expensive methods to ensure thermal stability.
By using the new patented technology, says Tansu, scientists can not only realize 1550-nm lasers on GaAs, but may even be able to extend the applications to 2500-nm for GaAs-based optoelectronics.
Tansu and Mawst have a patent pending on type-II QW optoelectronics to achieve 3-4 micron emission wavelengths that might find application in free-space communications, biochemical sensors, and infrared countermeasures against heat-seeking missiles that threaten both military and commercial aircrafts.
Posted on Wednesday, December 01, 2004